 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=-0.25A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 Symbol 2SC4517 2SC4517A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 3(Pulse6) 1.5 30(Tc=25C) 150 -55 to +150 1000 2SC4517 2SC4517A 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ Unit A V V 13.0min 16.90.3 8.40.2 A V MHz pF 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.15 IB2 (A) -0.45 ton (s) 0.7max tstg (s) 4max tf (s) 0.5max 2.54 3.9 BCE 0.2 IC - VCE Characteristics (Typical) 3 40 0m A VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V ) 1.5 IC/I B= 5 Const. I C - VBE Temperature Characteristics (Typical) 3 (VCE=4V) 300mA 200 mA Collector Current I C (A) 150 mA 2 100m A Collector Current I C (A) 1.0 VBE(sat) 2 1 IB=40m A 0.5 1 V C E( sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 Collector-Emitter Voltage V C E( V) Collector Current I C (A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 DC C urrent G ain h FE 125C 25C j - a( C/W) hFE - IC Temperature Characteristics (Typical) ton*t s t g*t f ( s) 7 5 t on* t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 4 V C C 250V IC:I B 1: I B2= 1:0.15:-0.45 1 0.5 ton 0.1 0.2 tf -55C Transient Thermal Resistance tstg Sw it ching Time 1 10 0.5 0.3 5 0.02 0.05 0.1 0.5 1 3 0.5 1 3 1 10 Time t(ms) 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 10 50 Reverse Bias Safe Operating Area 10 30 P c - T a Derating 5 s Ma xim um Powe r Dissipat io n P C( W) 10 s 5 0 W ith Collector Curr ent I C (A) 1 0.5 Co lle ctor Cu rre nt I C (A) 1 0.5 20 In fin ite he at si nk 0.1 0.05 Without Heatsink Natural Cooling 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% 2SC4517 10 2SC4517A 1000 Without Heatsink 2 0 0 25 50 75 100 125 150 0.01 2 5 10 50 100 500 1000 0.01 50 100 500 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 112 |
Price & Availability of 2SC4517
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |